PH3230S,115
MOSFET N-CH 30V 100A LFPAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PH3230S-115 is a surface-mount N-Channel MOSFET with a Drain-Source voltage (Vdss) of 30 V. This component features a continuous drain current (Id) of 100 A at 25°C (Tc) and a low on-resistance (Rds On) of 3.2 mOhm at 25 A, 10 V. The gate charge (Qg) is a maximum of 42 nC at 5 V, with input capacitance (Ciss) at a maximum of 4100 pF at 10 V. The device utilizes MOSFET technology and is housed in an LFPAK56, Power-SO8 package (SC-100, SOT-669). The PH3230S-115 is commonly employed in automotive and industrial applications requiring efficient power switching. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 25A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 10 V |
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