PH3120L,115
MOSFET N-CH 20V 100A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PH3120L-115 is an N-Channel Power MOSFET designed for demanding applications. This device features a 20V drain-source voltage (Vds) and a continuous drain current (Id) of 100A at 25°C (Tc), with a maximum power dissipation of 62.5W (Tc). The low on-resistance (Rds On) of 2.65mOhm at 25A and 10V (Vgs) is achieved through its TrenchMOS technology.
Key parameters include a gate charge (Qg) of 48.5 nC at 4.5V (Vgs) and an input capacitance (Ciss) of 4457 pF at 10V (Vds). The device supports drive voltages ranging from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is 2V at 1mA.
Packaged in a space-saving LFPAK56 (Power-SO8, SC-100, SOT-669) surface-mount configuration and supplied in cut tape, this MOSFET is suitable for high-power switching applications in automotive and industrial sectors. It operates reliably across an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.65mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 48.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4457 pF @ 10 V |
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