PH2530AL,115
MOSFET N-CH 30V 100A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ PH2530AL-115 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 100A at 25°C (Tc). The PH2530AL-115 exhibits a low on-resistance of 2.4mOhm at 15A and 10V, contributing to reduced conduction losses. With a gate charge (Qg) of 57nC at 10V and input capacitance (Ciss) of 3468pF at 12V, it is suitable for switching applications. The device is housed in a surface-mount LFPAK56, Power-SO8 package (SC-100, SOT-669) with tape and reel packaging. This MOSFET is frequently utilized in automotive, industrial power supplies, and electric vehicle charging systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3468 pF @ 12 V |
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