PH20100S,115
MOSFET N-CH 100V 34.3A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PH20100S-115 is an N-channel enhancement mode Power MOSFET. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 34.3A at 25°C case temperature. The on-resistance (Rds(on)) is specified at a maximum of 23mOhm at 10A and 10V gate-source voltage. With a power dissipation of 62.5W (Tc), it utilizes the LFPAK56 surface mount package, also known as SOT-669 or Power-SO8. Key parameters include a gate charge (Qg) of 39nC at 10V and input capacitance (Ciss) of 2264pF at 25V. This component is suitable for applications in power management, automotive, and industrial sectors requiring efficient power switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2264 pF @ 25 V |
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