PH1930AL,115
MOSFET N-CH 30V 100A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ PH1930AL-115 is an N-Channel MOSFET designed for high-efficiency power conversion. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 100A at 25°C (Tc). The ultra-low on-resistance of 2mOhm at 15A and 10V (Vgs) minimizes conduction losses. Key parameters include a gate charge of 64 nC (max) at 10V and an input capacitance of 3980 pF (max) at 12V. The PH1930AL-115 is housed in a thermally enhanced LFPAK56, Power-SO8 package (SC-100, SOT-669) suitable for surface mounting. This component is utilized in automotive, consumer electronics, and industrial applications requiring robust power management. The device is supplied on tape and reel (TR).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 12 V |
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