NX3008NBKMB,315
MOSFET N-CH 30V 530MA DFN1006B-3Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. NX3008NBKMB-315 is an N-Channel MOSFET designed for robust performance in demanding applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of up to 530mA at 25°C. The device offers a low on-resistance (Rds(on)) of 1.4 Ohm maximum at 350mA and 4.5V Vgs. With a maximum gate charge (Qg) of 0.68 nC at 4.5V, it facilitates efficient switching. Fabricated using MOSFET technology, it is housed in a compact DFN1006B-3 (3-XFDFN) surface mount package, ideal for space-constrained designs. Power dissipation is rated at 360mW (Ta) and 2.7W (Tc). This MOSFET is suitable for use in consumer electronics and general purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 530mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 350mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta), 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | DFN1006B-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.68 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 15 V |
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