NX2301P,215
MOSFET P-CH 20V 2A TO236ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ P-Channel MOSFET, part number NX2301P-215, is a surface-mount device in a TO-236AB (SC-59) package. This automotive-grade component features a 20V drain-source voltage and a continuous drain current capability of 2A at 25°C (Ta). The device exhibits a maximum Rds(on) of 120mOhm at 1A and 4.5V Vgs, with recommended drive voltages ranging from 2.5V to 4.5V. Key parameters include a maximum gate charge of 6nC at 4.5V Vgs and an input capacitance of 380pF at 6V Vds. The NX2301P-215 offers a maximum power dissipation of 400mW (Ta) or 2.8W (Tc) and operates up to 150°C (TJ). This MOSFET finds application in automotive and industrial control systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta), 2.8W (Tc) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | TO-236AB |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 6 V |
| Qualification | AEC-Q101 |