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NSF080120L4A0Q

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NSF080120L4A0Q

NSF080120L4A0/SOT8071/TO247-4L

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 1200 V 35A (Tc) 183W (Tc) Through Hole TO-247

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs120mOhm @ 20A, 15V
FET Feature-
Power Dissipation (Max)183W (Tc)
Vgs(th) (Max) @ Id2.9V @ 2mA
Supplier Device PackageTO-247
Grade-
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Vgs (Max)+22V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds1335 pF @ 800 V
Qualification-

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