GAN7R0-150LBEZ
150 V, 7 MOHM GALLIUM NITRIDE (GManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 150 V 28A 28W Surface Mount 3-FCLGA (3.2x2.2)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-VLGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 28W |
| Vgs(th) (Max) @ Id | 2.1V @ 5mA |
| Supplier Device Package | 3-FCLGA (3.2x2.2) |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 865 pF @ 85 V |
| Qualification | - |
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