GAN3R2-100CBEAZ
100 V, 3.2 MOHM GALLIUM NITRIDEManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 100 V 60A 394W Surface Mount 8-WLCSP (3.5x2.13)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-XFBGA, WLCSP |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 394W |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA |
| Supplier Device Package | 8-WLCSP (3.5x2.13) |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 50 V |
| Qualification | - |
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