GAN190-650EBEZ
650 V, 190 MOHM GALLIUM NITRIDEManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 11.5A (Tc) 125W (Tc) Surface Mount, Wettable Flank DFN8080-8
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 3.9A, 6V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 12.2mA |
| Supplier Device Package | DFN8080-8 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Vgs (Max) | +7V, -1.4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 96 pF @ 400 V |
| Qualification | - |
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