GAN063-650WSAQ
GANFET N-CH 650V 34.5A TO247-3Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia's GAN063-650WSAQ is an N-channel GaNFET component designed for high-power applications. This device features a drain-to-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 34.5 A at 25°C (Tc). The GaNFET technology offers a low on-resistance (Rds On) of 60 mOhm maximum at 25 A and 10 V (Vgs). With a maximum power dissipation of 143 W (Tc), it is suitable for demanding thermal environments. The component is packaged in a TO-247-3 through-hole package, facilitating easy integration into existing designs. Key parameters include a gate charge (Qg) of 15 nC maximum at 10 V (Vgs) and an input capacitance (Ciss) of 1000 pF maximum at 400 V (Vds). This device is utilized in power supply, industrial motor control, and renewable energy sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 143W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-247-3 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| Qualification | - |
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