GAN041-650WSBQ
GAN041-650WSB/SOT429/TO-247Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 47.2A (Tc) 187W (Tc) Through Hole TO-247-3
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 187W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-247-3 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V |
| Qualification | - |
Request a Quote
Clients Also Buy
PMV48XP/MIR
MOSFET P-CH 20V 3.5A TO236AB
BUK9Y07-30B,115
MOSFET N-CH 30V 75A LFPAK56
PSMN1R0-30YLDX
MOSFET N-CH 30V 100A LFPAK56
