GAN039-650NTBZ
650 V, 33 MOHM GALLIUM NITRIDE (Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. GAN039-650NTBZ is a 650V N-Channel GaNFET. This component features a low on-resistance of 39mOhm at 32A and 10V drive voltage. The continuous drain current capability is 58.5A (Tc) with a maximum power dissipation of 250W (Tc). Input capacitance (Ciss) is a maximum of 1980 pF at 400V, and gate charge (Qg) is 26 nC at 10V. The device is housed in a 12-BESOP (CCPAK1212i) surface mount package, rated for an operating temperature range of -55°C to 150°C (TJ). This GaNFET is suitable for applications in high-efficiency power conversion, including data centers, renewable energy systems, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 12-BESOP (0.370"", 9.40mm Width), Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 1mA |
| Supplier Device Package | CCPAK1212i |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 400 V |
| Qualification | - |