BUK9Y30-75B/C2,115
MOSFET N-CH 75V 34A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ BUK9Y30-75B-C2-115 is an N-Channel Power MOSFET designed for high-performance applications. This device features a continuous drain current (Id) of 34A at 25°C and a drain-to-source voltage (Vdss) of 75V. The on-resistance (Rds On) is specified at a maximum of 28mOhm at 15A and 10V. Key parameters include a gate charge (Qg) of 19 nC maximum at 5V and input capacitance (Ciss) of 2070 pF maximum at 25V. The MOSFET utilizes a TrenchMOS™ technology and is housed in a LFPAK56, Power-SO8 package, also referred to as SC-100 or SOT-669, suitable for surface mounting. This component is commonly found in automotive and industrial power management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 15A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2070 pF @ 25 V |
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