BUK9Y19-55B/C2,115
MOSFET N-CH 55V 46A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ BUK9Y19-55B-C2-115 is an N-Channel Power MOSFET designed for demanding applications. This component offers a 55 V drain-source voltage (Vdss) and a continuous drain current (Id) of 46 A at 25°C. Featuring a low Rds(on) of 17.3 mOhm at 20 A and 10 V, it minimizes conduction losses. The device exhibits a typical gate charge (Qg) of 18 nC at 5 V and an input capacitance (Ciss) of 1992 pF at 25 V. It is housed in a compact LFPAK56, Power-SO8 (SC-100, SOT-669) surface mount package, supplied on tape and reel. This MOSFET technology is prevalent in automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A |
| Rds On (Max) @ Id, Vgs | 17.3mOhm @ 20A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1992 pF @ 25 V |