BUK9Y11-30B,115
MOSFET N-CH 30V 59A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK9Y11-30B-115, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 59A at 25°C (Tc). This device features a low on-resistance of 9mOhm maximum at 25A and 10V, ensuring efficient power delivery. Designed with surface mount capability in the LFPAK56 (Power-SO8) package, it provides excellent thermal performance with a maximum power dissipation of 75W (Tc). Key parameters include a gate charge of 16.5 nC (max) at 5V and input capacitance of 1614 pF (max) at 25V. The drive voltage range for optimal Rds(on) is between 4.5V and 10V. Qualified to AEC-Q101 and featuring an automotive grade, this MOSFET is suitable for demanding automotive applications and high-power switching circuits. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1614 pF @ 25 V |
| Qualification | AEC-Q101 |
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