BUK9E06-55B,127
MOSFET N-CH 55V 75A I2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ BUK9E06-55B-127 is an N-Channel Power MOSFET optimized for high-current applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 75A at 25°C, with a maximum power dissipation of 258W (Tc). The BUK9E06-55B-127 exhibits a low on-resistance of 5.4mOhm at 25A and 10V, facilitated by its TrenchMOS™ technology. Key parameters include a Gate Charge (Qg) of 60nC at 5V and an input capacitance (Ciss) of 7565pF at 25V. Designed for through-hole mounting in an I2PAK package, it operates across a wide temperature range of -55°C to 175°C. This component is qualified to AEC-Q101 standards, making it suitable for automotive applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 258W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | I2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7565 pF @ 25 V |
| Qualification | AEC-Q101 |
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