BUK9E06-55A,127
MOSFET N-CH 55V 75A I2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK9E06-55A-127, offers a 55V drain-source voltage and 75A continuous drain current at 25°C (Tc). This device features a low on-resistance of 5.8mOhm at 25A and 10V Vgs. The BUK9E06-55A-127 is housed in an I2PAK package for through-hole mounting and supports a wide operating temperature range from -55°C to 175°C (TJ). Its high power dissipation capability of 300W (Tc) and AEC-Q101 qualification make it suitable for demanding automotive applications. Key electrical characteristics include input capacitance (Ciss) of 8600pF at 25V and a gate-source threshold voltage (Vgs(th)) of 2V at 1mA.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | I2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8600 pF @ 25 V |
| Qualification | AEC-Q101 |
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