BUK9E04-40A,127
MOSFET N-CH 40V 75A I2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK9E04-40A-127. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc). The BUK9E04-40A-127 offers a low on-resistance of 4mOhm maximum at 25A and 10V. Designed with advanced TrenchMOS technology, it provides excellent thermal performance with a maximum power dissipation of 300W (Tc). The device is housed in an I2PAK package (TO-262-3 Long Leads, I2PAK, TO-262AA) suitable for through-hole mounting. Key electrical parameters include a gate charge of 128 nC at 5V and input capacitance of 8260 pF at 25V. The BUK9E04-40A-127 is AEC-Q101 qualified, making it suitable for automotive applications. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | I2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.3V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8260 pF @ 25 V |
| Qualification | AEC-Q101 |
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