BUK9C10-65BIT,118
MOSFET N-CH 65V 75A D2PAK-7Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia BUK9C10-65BIT-118 is an N-Channel Power MOSFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 65 V and a continuous drain current (Id) of 75 A at 25°C, with a maximum power dissipation of 171 W (Tc). The Rds(on) is specified at a low 8.3 mOhm at 25 A and 10 V gate drive. The MOSFET offers a gate charge (Qg) of 59.6 nC at 5 V and input capacitance (Ciss) of 4170 pF at 25 V. It is housed in a TO-263-7, D2PAK-7 package for surface mounting and operates across a wide temperature range of -55°C to 150°C. This component is qualified to AEC-Q101, indicating its suitability for automotive applications, including power management and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 171W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 65 V |
| Gate Charge (Qg) (Max) @ Vgs | 59.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4170 pF @ 25 V |
| Qualification | AEC-Q101 |
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