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BUK9C10-55BIT/A,11

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BUK9C10-55BIT/A,11

MOSFET N-CH 55V 75A D2PAK-7

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. presents the BUK9C10-55BIT-A-11, an N-Channel TrenchPLUS series MOSFET. This component features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous drain current (Id) capability of 75 A at 25°C (Tc). With a maximum power dissipation of 194 W (Tc) and a low on-resistance (Rds On) of 9 mOhm at 10 A and 10 V, this device is optimized for efficiency. The D2PAK-7 (TO-263-7) surface mount package offers robust thermal performance. Key parameters include a gate charge (Qg) of 51 nC at 5 V and input capacitance (Ciss) of 4667 pF at 25 V. It operates within a temperature range of -55°C to 175°C (TJ) and supports drive voltages from 4.5V to 10V. This MOSFET is suitable for demanding applications in the automotive and industrial sectors. The device is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: TrenchPLUSRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)194W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageD2PAK-7
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds4667 pF @ 25 V

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