BUK9880-55,135
MOSFET N-CH 55V 7.5A SOT223Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK9880-55-135, offers a 55V drain-source breakdown voltage and a continuous drain current of 7.5A (Tc). This device features a maximum on-resistance of 80mOhm at 5A and 5V gate-source voltage. Designed for surface mounting within a TO-261-4 (SOT-223) package, it supports a maximum power dissipation of 8.3W (Tc). The BUK9880-55-135 operates across an extended temperature range of -55°C to 150°C (TJ) and is qualified to AEC-Q101 standards, making it suitable for automotive applications. Its typical use cases include power management and switching applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SOT-223 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
| Qualification | AEC-Q101 |
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