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BUK9840-55,115

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BUK9840-55,115

MOSFET N-CH 55V 5A SOT223

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ BUK9840-55-115 is an N-Channel power MOSFET with a Drain-Source Voltage (Vdss) of 55V. This component offers a continuous Drain Current (Id) of 5A at 25°C and a maximum Power Dissipation (Pd) of 1.8W. The Rds On is specified at a maximum of 40mOhm at 5A drain current and 5V gate-source voltage. Featuring a Vgs(th) of 2V at 1mA and input capacitance (Ciss) of 1400 pF at 25V, this MOSFET is designed for efficient switching applications. The device is qualified to AEC-Q101, making it suitable for automotive applications. It is packaged in a SOT-223 (TO-261-4, TO-261AA) surface mount package and supplied on tape and reel. Operating temperature ranges from -55°C to 150°C.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Rds On (Max) @ Id, Vgs40mOhm @ 5A, 5V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageSOT-223
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 25 V
QualificationAEC-Q101

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