BUK98150-55/CUF
MOSFET N-CH 55V 5.5A SOT223Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ BUK98150-55-CUF is a high-performance N-Channel MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 55 V and supports a continuous drain current (Id) of 5.5 A at 25°C, with a maximum power dissipation of 8.3 W (Tc). The Rds On is specified at a maximum of 150 mOhm at 5 A and 5 V gate-source voltage. The device utilizes a SOT-223 surface mount package (TO-261-4, TO-261AA). Key characteristics include an input capacitance (Ciss) of 330 pF at 25 V and a gate-source threshold voltage (Vgs(th)) of 2 V at 1 mA. This MOSFET is suitable for use in automotive and industrial sectors requiring robust power management solutions. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
