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BUK9660-100A,118

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BUK9660-100A,118

MOSFET N-CH 100V 26A D2PAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ BUK9660-100A-118 is an N-Channel Power MOSFET designed for demanding applications. This component features a 100 V Drain-Source Voltage (Vdss) and a continuous drain current capability of 26 A at 25°C, with a maximum power dissipation of 106 W (Tc). It offers a low on-resistance of 58 mOhm at 15 A and 10 V Vgs. The device is qualified to AEC-Q101 automotive standards and operates across a wide temperature range of -55°C to 175°C. Key parameters include an input capacitance (Ciss) of 1924 pF at 25 V and a gate threshold voltage (Vgs(th)) of 2 V at 1 mA. The BUK9660-100A-118 is supplied in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package, presented on tape and reel. This MOSFET is suitable for use in automotive and industrial power switching applications.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Rds On (Max) @ Id, Vgs58mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)106W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageD2PAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds1924 pF @ 25 V
QualificationAEC-Q101

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