BUK965R4-40E,118
MOSFET N-CH 40V 75A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. BUK965R4-40E-118 is a TrenchMOS™ N-Channel power MOSFET designed for high-performance applications. This component features a 40V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 75A at 25°C (Tc). The Rds(on) is specified at a maximum of 4.4mOhm at 25A and 10V Vgs. With a maximum power dissipation of 137W (Tc), it is suited for demanding thermal environments. The device offers a gate charge (Qg) of 33.9nC at 5V Vgs and input capacitance (Ciss) of 4483pF at 25V Vds. This MOSFET is qualified to AEC-Q101 and is packaged in a D2PAK (TO-263-3) surface mount configuration, supplied on tape and reel. Its robust design makes it suitable for automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 137W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 33.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4483 pF @ 25 V |
| Qualification | AEC-Q101 |
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