BUK964R8-60E,118
MOSFET N-CH 60V 100A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel MOSFET with part number BUK964R8-60E-118. This 60V device features a low Rds(on) of 4.4mOhm at 25A and 10V, and a continuous drain current capability of 100A at 25°C. Designed in a D2PAK surface mount package, it offers a maximum power dissipation of 234W at 25°C. Key parameters include a gate charge of 65 nC at 5V, input capacitance of 9710 pF at 25V, and a threshold voltage of 2.1V at 1mA. This AEC-Q101 qualified device is suitable for automotive applications. It operates across a temperature range of -55°C to 175°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 234W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9710 pF @ 25 V |
| Qualification | AEC-Q101 |
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