BUK964R7-80E,118
MOSFET N-CH 80V 120A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK964R7-80E-118, offers an 80V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc). This AEC-Q101 qualified device features a low on-resistance of 4.5mOhm maximum at 25A and 10V, with a typical gate charge of 92.1 nC at 5V. Designed for high-power switching applications, it dissipates up to 324W (Tc) and is housed in a TO-263-3, D2PAK surface-mount package. Operating across a wide temperature range of -55°C to 175°C, this MOSFET is suitable for automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 324W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 92.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15340 pF @ 25 V |
| Qualification | AEC-Q101 |
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