BUK964R1-40E,118
MOSFET N-CH 40V 75A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ MOSFET N-Channel BUK964R1-40E-118. This device features 40V drain-to-source voltage and a continuous drain current of 75A at 25°C, with a maximum power dissipation of 182W. The low on-resistance of 3.5mOhm is achieved at 25A and 10V gate-source voltage. Key parameters include a gate charge of 52.1 nC at 5V and input capacitance of 6650 pF at 25V. Designed for surface mounting in a D2PAK package, this component operates across a temperature range of -55°C to 175°C. It is qualified to AEC-Q101 standards, making it suitable for automotive applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 182W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 52.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6650 pF @ 25 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
