BUK962R8-60E,118
MOSFET N-CH 60V 120A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ BUK962R8-60E-118 is an N-channel power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C, with a maximum power dissipation of 324W under continuous load. The extremely low on-resistance of 2.5mOhm at 25A and 10V gate drive, coupled with a 5V gate drive capability, ensures high efficiency in power conversion. Key parameters include a gate charge (Qg) of 92nC at 5V and input capacitance (Ciss) of 15600pF at 25V. The device is housed in a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management. Qualified to AEC-Q101 and featuring an automotive grade, this MOSFET is suitable for automotive and industrial power switching applications. It operates reliably across a wide temperature range of -55°C to 175°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 324W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15600 pF @ 25 V |
| Qualification | AEC-Q101 |
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