BUK962R8-30B,118
MOSFET N-CH 30V 75A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel power MOSFET, part number BUK962R8-30B-118, offers a 30 V drain-source voltage with a continuous drain current of 75 A at 25°C (Tc). This AEC-Q101 qualified component is designed for demanding automotive applications. Featuring a low on-resistance of 2.4 mOhm at 25 A and 10 V (Vgs), it dissipates up to 300 W (Tc). The device utilizes N-Channel MOSFET technology and is packaged in a surface mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) for efficient thermal management. Key parameters include a gate charge of 89 nC at 5 V (Vgs) and input capacitance of 10185 pF at 25 V (Vds). It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10185 pF @ 25 V |
| Qualification | AEC-Q101 |
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