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BUK9620-55A,118

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BUK9620-55A,118

MOSFET N-CH 55V 54A D2PAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ BUK9620-55A-118 is an N-Channel Power MOSFET with a drain-to-source voltage (Vdss) of 55 V. This device features a continuous drain current (Id) of 54 A at 25°C (Tc) and offers a maximum power dissipation of 118 W (Tc). The on-resistance (Rds On) is specified at a maximum of 18 mOhm at 25 A and 10 V gate-source voltage. Designed with a 4.5V to 10V drive voltage range, it utilizes a TrenchMOS™ technology for enhanced performance. The BUK9620-55A-118 is housed in a TO-263-3, D2PAK surface mount package and is AEC-Q101 qualified, making it suitable for automotive applications. It operates across a wide temperature range from -55°C to 175°C (TJ). Input capacitance (Ciss) is a maximum of 2210 pF at 25 V.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Rds On (Max) @ Id, Vgs18mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)118W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageD2PAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds2210 pF @ 25 V
QualificationAEC-Q101

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