BUK9615-100E,118
MOSFET N-CH 100V 66A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK9615-100E-118, is designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 66A at 25°C (Tc), with a maximum Power Dissipation (Pd) of 182W (Tc). The MOSFET exhibits a low on-resistance (Rds On) of 14mOhm at 15A and 10V Vgs. Its high current capability and low thermal resistance, coupled with its D2PAK surface mount package, make it suitable for demanding applications in automotive and industrial sectors. Key parameters include Gate Charge (Qg) of 60 nC at 5V and input capacitance (Ciss) of 6813 pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is qualified to AEC-Q101 standards.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 182W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6813 pF @ 25 V |
| Qualification | AEC-Q101 |
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