BUK9615-100A,118
MOSFET N-CH 100V 75A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ BUK9615-100A-118 is an N-Channel Power MOSFET designed for robust performance in demanding applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 75A at 25°C (Tc), with a maximum power dissipation of 230W (Tc). The device offers a low on-resistance of 14.4mOhm (max) at 25A and 10V Vgs. Operating across a wide temperature range of -55°C to 175°C (TJ) and qualified to AEC-Q101 standards, it is suitable for automotive and industrial sectors. The BUK9615-100A-118 utilizes a D2PAK (TO-263-3, D2PAK) surface mount package for efficient thermal management. Key electrical characteristics include an input capacitance (Ciss) of 8600pF (max) at 25V Vds and a gate-source threshold voltage (Vgs(th)) of 2V (max) at 1mA.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8600 pF @ 25 V |
| Qualification | AEC-Q101 |
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