BUK9610-100B,118
MOSFET N-CH 100V 75A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK9610-100B-118, offers a 100V drain-source breakdown voltage and a continuous drain current capability of 75A (Tc) at 25°C. This device features a low on-resistance of 9.7mOhm maximum at 25A and 10V Vgs. Designed for high-efficiency power switching applications, it operates across a wide junction temperature range of -55°C to 175°C. Key parameters include a gate charge of 86 nC maximum at 5V Vgs and input capacitance of 11045 pF maximum at 25V Vds. The TO-263-3, D2PAK package facilitates surface mounting and is supplied in Tape & Reel (TR) packaging. This AEC-Q101 qualified component is commonly used in automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11045 pF @ 25 V |
| Qualification | AEC-Q101 |
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