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BUK9606-40B,118

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BUK9606-40B,118

MOSFET N-CH 40V 75A D2PAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ BUK9606-40B-118 is a high-performance N-Channel power MOSFET designed for demanding applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc), with a maximum power dissipation of 203W (Tc). The low on-resistance of 5mOhm at 25A and 10V (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 44 nC at 5V and input capacitance (Ciss) of 4901 pF at 25V. The MOSFET is specified for automotive applications with AEC-Q101 qualification and operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a D2PAK (TO-263-3) surface-mount package and supplied on tape and reel, this component is suitable for high-power switching in automotive and industrial power management systems.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)203W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageD2PAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs44 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds4901 pF @ 25 V
QualificationAEC-Q101

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