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BUK9575-55A,127

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BUK9575-55A,127

MOSFET N-CH 55V 20A TO220AB

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK9575-55A-127, offers a 55 V drain-source breakdown voltage with a continuous drain current of 20 A at 25°C (Tc). This MOSFET features a low on-resistance of 68 mOhm maximum at 10 A and 10 V Vgs. The device is housed in a TO-220AB package, suitable for through-hole mounting, and supports a maximum power dissipation of 62 W (Tc). Key parameters include a gate-source voltage range of ±10 V and a threshold voltage of 2 V at 1 mA. Input capacitance (Ciss) is specified at a maximum of 643 pF at 25 V. Operating temperature ranges from -55°C to 175°C (TJ). This component is frequently utilized in power management applications across automotive and industrial sectors.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs68mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)62W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds643 pF @ 25 V

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