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BUK952R8-30B,127

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BUK952R8-30B,127

MOSFET N-CH 30V 75A TO220AB

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. BUK952R8-30B-127 is an N-Channel TrenchMOS™ MOSFET. This component features a Drain-Source voltage (Vdss) of 30 V and a continuous drain current (Id) of 75 A at 25°C. The device offers a low on-resistance (Rds On) of 2.4 mOhm at 25 A and 10 V. With a maximum power dissipation of 300 W (Tc), it is suitable for demanding applications. The MOSFET supports gate drive voltages from 4.5 V to 10 V and operates within a temperature range of -55°C to 175°C (TJ). Key parameters include input capacitance (Ciss) of 10185 pF at 25 V and gate charge (Qg) of 89 nC at 5 V. The device is housed in a TO-220AB package and is supplied in tube packaging. This MOSFET is utilized in industrial and automotive sectors.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs2.4mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs89 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds10185 pF @ 25 V

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