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BUK9529-100B,127

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BUK9529-100B,127

MOSFET N-CH 100V 46A TO220AB

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc.'s BUK9529-100B-127 is a N-Channel TrenchMOS™ Power MOSFET designed for high-power switching applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 46A at 25°C, with a maximum power dissipation of 157W (Tc). The BUK9529-100B-127 exhibits a low on-resistance (Rds On) of 27mOhm at 25A and 10V, contributing to efficient power conversion. Key electrical characteristics include a gate charge (Qg) of 33 nC at 5V and an input capacitance (Ciss) of 4360 pF at 25V. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is housed in a standard TO-220AB through-hole package. It finds application in industries such as automotive, industrial power, and consumer electronics.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C46A (Tc)
Rds On (Max) @ Id, Vgs27mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)157W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds4360 pF @ 25 V

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