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BUK9506-75B,127

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BUK9506-75B,127

MOSFET N-CH 75V 75A TO220AB

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. BUK9506-75B-127 is an N-Channel TrenchMOS™ Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 75 V and a continuous drain current (Id) of 75 A at 25°C, with a maximum power dissipation of 300 W (Tc). The BUK9506-75B-127 offers a low on-resistance (Rds On) of 5.5 mOhm at 25 A and 10 V, facilitated by its efficient TrenchMOS™ technology. Gate drive voltages range from 4.5 V to 10 V, with a maximum gate-source voltage (Vgs) of ±15 V. Key electrical parameters include a gate charge (Qg) of 95 nC at 5 V and an input capacitance (Ciss) of 11693 pF at 25 V. The component is housed in a TO-220AB package for through-hole mounting and operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for power switching and motor control applications in industries such as automotive and industrial automation.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs5.5mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds11693 pF @ 25 V

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