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BUK9230-100B,118

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BUK9230-100B,118

MOSFET N-CH 100V 47A DPAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK9230-100B-118, offers a 100V drain-source breakdown voltage and a continuous drain current capability of 47A at 25°C (Tc). This surface-mount device, packaged in a DPAK (TO-252-3, SC-63), features a maximum on-resistance of 28mOhm at 25A and 10V Vgs. With a power dissipation of 167W (Tc), it is suitable for demanding applications. The device exhibits a gate charge (Qg) of 33nC at 5V Vgs and an input capacitance (Ciss) of 3805pF at 25V Vds. Designed for automotive applications, this AEC-Q101 qualified MOSFET operates across a temperature range of -55°C to 185°C (TJ).

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 185°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Rds On (Max) @ Id, Vgs28mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)167W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds3805 pF @ 25 V
QualificationAEC-Q101

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