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BUK9219-55A,118

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BUK9219-55A,118

MOSFET N-CH 55V 55A DPAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK9219-55A-118, offers a 55V drain-source breakdown voltage and 55A continuous drain current capability. This surface mount device, housed in a DPAK (TO-252-3) package, features a maximum on-resistance of 17.6mOhm at 25A and 10V Vgs. With a maximum power dissipation of 114W at 25°C (Tc), it is suitable for demanding applications. The device operates across a wide temperature range of -55°C to 175°C (TJ). Qualified to AEC-Q101 standards and featuring Automotive grade, this MOSFET is utilized in automotive and industrial power management systems. It supports a gate-source voltage range of ±10V and exhibits a threshold voltage (Vgs(th)) of 2V at 1mA. Input capacitance (Ciss) is rated at 2920 pF maximum at 25V.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Rds On (Max) @ Id, Vgs17.6mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)114W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds2920 pF @ 25 V
QualificationAEC-Q101

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