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BUK92150-55A,118

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BUK92150-55A,118

MOSFET N-CH 55V 11A DPAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Nexperia USA Inc. BUK92150-55A-118 is an N-Channel MOSFET from the TrenchMOS™ series. This component features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 11A at 25°C (Tc). The device offers a maximum power dissipation of 36W (Tc) and a low on-resistance (Rds On) of 125mOhm at 5A, 10V. Designed for surface mounting, it is housed in a TO-252-3, DPAK package. Key electrical characteristics include a Gate Charge (Qg) of 6 nC at 5V and an input capacitance (Ciss) of 338 pF at 25V. The BUK92150-55A-118 is AEC-Q101 qualified and operates across a temperature range of -55°C to 175°C (TJ), making it suitable for automotive applications and other demanding environments.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs125mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)36W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds338 pF @ 25 V
QualificationAEC-Q101

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