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BUK9214-30A,118

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BUK9214-30A,118

MOSFET N-CH 30V 63A DPAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK9214-30A-118, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 63A at 25°C. This AEC-Q101 qualified device features a low on-resistance of 12 mOhm at 25A and 10V, facilitating efficient power transfer. The Nexperia BUK9214-30A-118 utilizes advanced TrenchMOS technology for enhanced performance and is housed in a surface-mount DPAK (TO-252-3) package, suitable for high-density automotive applications. With a maximum power dissipation of 107W at 25°C (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is designed for demanding power management tasks. Key electrical parameters include a gate charge of 31 nC at 5V and input capacitance of 2317 pF at 25V.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C63A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)107W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2317 pF @ 25 V
QualificationAEC-Q101

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