BUK9212-55B,118
MOSFET N-CH 55V 75A DPAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ BUK9212-55B-118 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C, with a maximum power dissipation of 167W. The low on-resistance (Rds On) of 10mOhm at 25A and 10V, combined with a gate charge (Qg) of 32 nC at 5V, ensures efficient switching. Engineered with TrenchMOS™ technology, it offers excellent thermal performance and reliability. The MOSFET is qualified to AEC-Q101 standards, making it suitable for automotive applications, including power management, motor control, and battery charging systems. Packaged in a TO-252-3, DPAK (SC-63) surface-mount package and supplied on tape and reel (TR), it supports high-volume manufacturing. The device operates across a wide temperature range of -55°C to 185°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 185°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3519 pF @ 25 V |
| Qualification | AEC-Q101 |
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