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BUK9209-40B,118

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BUK9209-40B,118

MOSFET N-CH 40V 75A DPAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK9209-40B-118, offers a 40V drain-source breakdown voltage and a continuous drain current of 75A at 25°C (Tc). This surface-mount device in a DPAK package features a maximum on-resistance of 7mOhm at 25A and 10V Vgs. It is designed for efficient switching with a maximum gate charge of 32nC at 5V Vgs and exhibits low input capacitance, 3619pF at 25V Vds. The MOSFET is rated for 167W continuous power dissipation at 25°C (Tc) and operates across a wide temperature range of -55°C to 185°C (TJ). Qualified to AEC-Q101 standards and featuring an automotive grade, this component is suitable for demanding applications within the automotive sector.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 185°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)167W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds3619 pF @ 25 V
QualificationAEC-Q101

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