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BUK9207-30B,118

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BUK9207-30B,118

MOSFET N-CH 30V 75A DPAK

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ BUK9207-30B-118 is an N-channel power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C, with a maximum power dissipation of 167W (Tc). The low on-resistance (Rds On) of 5mOhm at 25A and 10V gate-source voltage ensures efficient power transfer. Key electrical characteristics include a gate charge (Qg) of 31 nC at 5V and input capacitance (Ciss) of 3430 pF at 25V. Operating across a wide temperature range of -55°C to 185°C (TJ), this MOSFET is qualified to AEC-Q101 standards, making it suitable for automotive applications. The device is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied on tape and reel. The maximum gate-source voltage (Vgs) is ±15V, with a threshold voltage (Vgs(th)) of 2V at 1mA. Drive voltage options range from 5V to 10V for optimal Rds On performance.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 185°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)167W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds3430 pF @ 25 V
QualificationAEC-Q101

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