BUK7Y20-30B,115
MOSFET N-CH 30V 39.5A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK7Y20-30B-115. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 39.5A at 25°C (Tc). The Rds(on) is specified at a maximum of 20mOhm at 20A and 10V Vgs. With a gate charge (Qg) of 11.2 nC at 10V Vgs and input capacitance (Ciss) of 688 pF at 25V Vds, it offers efficient switching characteristics. The MOSFET is constructed using Metal Oxide technology and is housed in a LFPAK56, Power-SO8 (SC-100, SOT-669) surface mount package. It is qualified to AEC-Q101 standards, making it suitable for automotive applications. The maximum power dissipation is 59W (Tc) and it operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 59W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 688 pF @ 25 V |
| Qualification | AEC-Q101 |
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