BUK7Y18-55B,115
MOSFET N-CH 55V 47.4A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK7Y18-55B-115, offers a 55V drain-source voltage rating and a continuous drain current capability of 47.4A at 25°C (Tc). This device features a low on-resistance of 18mOhm maximum at 20A, 10V, and a maximum power dissipation of 85W (Tc). Designed for high-efficiency switching applications, it has a gate charge of 21.9 nC maximum at 10V. The BUK7Y18-55B-115 is housed in a space-saving LFPAK56 (Power-SO8) surface-mount package, suitable for demanding thermal environments with an operating junction temperature range of -55°C to 175°C. This automotive-grade component is qualified to AEC-Q101 standards and finds application in automotive power management, electric vehicle systems, and industrial motor control.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1263 pF @ 25 V |
| Qualification | AEC-Q101 |
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